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1 depletion channel
збіднений каналEnglish-Ukrainian dictionary of microelectronics > depletion channel
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2 channel
1) (струмопровідний) канал 2) канальна область, канал 3) канал (група близько розташованих з’єднань в базовому матричному кристалі) 4) канавка 5) канал зв’язку - buried channel
- charge-tranfer channel
- cleavage channel
- data channel
- depletion channel
- electron channel
- enchancement channel
- FET channel
- Gaussian-doped channel
- implanted channel
- induced channel
- internal channel
- inversion [inverted] channel
- isolation channel
- metal channel
- metallized ceramic channel
- return channel
- scribe channel
- standard channels
- surface channel -
3 transistor
транзистор - abrupt heterojunction bipolar transistor
- access transistor
- amorphous transistor
- avalanche-injector MOS transistor
- ballistic transistor
- barrier-emitter transistor
- beam-lead transistor
- bipolar junction transistor
- bipolar transistor
- bipolar quantum resonant tunneling transistor
- buried-channel MOS transistor
- buried-channel transistor
- buried-oxide MOS transistor
- charge-injection transistor
- chip transistor
- chip-and-wire transistor
- clamped transistor
- closed-gate MOS transistor
- collector-grounded transistor
- common-base transistor
- common-collector transistor
- common-emitter transistor
- complementary transistors
- composite transistor
- Darlington transistor
- deep depletion transistor
- deep-diode transistor
- depletion-mode MOS transistor
- depletion MOS transistor
- diffused-emitter-and-base transistor
- diffused planar transistor
- δ-doped field-effect transistor
- double-diffused MOS transistor
- double-heterojunction bipolar transistor
- double-implanted MOS transistor
- downward-scaled MOS transistor
- electrostatic induction transistor
- emitter-coupled transistor
- enhancement-mode MOS transistor
- enhancement MOS transistor
- epibase transistor
- epitaxial planar transistor
- epitaxial transistor
- fan-out transistor
- fast switching transistor
- field-effect transistor
- filamentary transistor
- floating-gate MOS transistor
- front-end transistor
- gate-modulated bipolar transistor
- GIMIC transistor
- grooved-gate MOS transistor
- heterojunction transistor
- high-electron mobility transistor
- high-performance transistor
- H-MOS transistor
- homojunction transistor
- hot-electron transistor
- integrated circuit transistor
- integrated transistor
- interdigitated transistor
- inverted transistor
- ion-implanted base transistor
- ion sensitive field effect transistor ISFET
- ion sensitive field effect transistor
- junction transistor
- lateral transistor
- load transistor
- low-power transistor
- memory transistor
- merged transistor
- mesa-typetransistor
- mesatransistor
- mesh-emitter transistor
- metal-alumina-semiconductor transistor
- metal-base transistor
- metal-gate MOS transistor
- metal-insulator-semiconductor transistor
- metal-nitride-oxide-semiconductor transistor
- metal-oxide-semiconductor transistor
- micropower transistor
- monoiythic hot-electron transistor
- multiemitter transistor
- multiple-emitter transistor
- multiple integrated transistor
- n-channel MOS transistor
- negative-impedance transistor
- n-p-n transistor
- off transistor
- on transistor
- optical transistor
- optoelectronic transistor
- overlay transistor
- parasitic transistor
- pass-gate transistor
- p-channel MOS transistor
- p-channel transistor
- permeable-base transistor
- piezo transistor
- planar transistor
- planar epitaxial transistor
- plastic transistor
- p-n-p transistor
- pull-up transistor
- punch-through transistor
- quantum-effect transistor
- quantum wire transistor
- radio-frequency transistor
- recessed-gate MOS transistor
- recessed-gate transistor
- resonant-gate transistor
- Schottky transistor
- Schottky-barrier collector transistor
- Schottky collector transistor
- Schottky-diode clamped transistor
- Schottky gated transistor
- sealed transistor
- series-connectedtransistors
- seriestransistors
- shallow-junction transistor
- silicon-gate MOS transistor
- silicon-gate transistor
- silicon-on-sapphire transistor
- stacked transistor
- static induction transistor
- stepped electrode transistor
- superconducting transistor
- surface-barrier transistor
- surface-charge transistor
- switching-type transistor
- switching transistor
- tandem transistor
- thin-film transistor
- T-MOS transistor
- trap-controlled transistor
- tunnel emitter transistor
- unijunction transistor
- unipolar transistor
- vertical transistor
- XMOS transistor
- 3D trench transistorEnglish-Ukrainian dictionary of microelectronics > transistor
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4 FET
польовий транзистор, ПТ - bipolar inversion channel FET
- Bloch FET
- buried-channel FET
- charge-coupled FET
- closed-geometry FET
- compound FET
- conductor-insulator-semiconductor FET
- depletion-mode FET
- depletion FET
- dual-gate FET
- enhancement-modeFET
- enhancementFET
- floating-gate FET
- heterointerface FET
- heterostructure insulated-gate FET
- high-реrformance FET
- infrared FET
- insulated-gate FET
- ion-implanted FET
- ion-sensitive FET
- junction-gateFET
- junctionFET
- K-band FET
- lateral FET
- MBE FET
- metal-gate FET
- metal-insulator-semiconductor FET
- metal-охide-semiconductor
- metal-Schottky FET
- metal-semiconductor FET
- microwave FET
- modulation-doped FET
- multichannel FET
- multiple-gate finger FET
- nanometer-scale FET
- n-channel FET
- negative FET
- negative resistance FET
- normally-off FET
- normally-on FET
- offset-gate FET
- p-channel FET
- photosensitive FET
- photo FET
- p–n-junction FET
- positive-type FET
- resonant tunneling FET
- Schottky-diode FET
- Schottky-gate FET
- self-aligned gate FET
- self-aligned FET
- short-channel FET
- short gate-length FET
- silicon-gate FET
- tunneling-transfer FET
- two-dimensional electron-gas FET
- unipolar FET
- vertical-channel [vertical-structure] FET
- V-gate FET
- δ-doped FET
- δ FET -
5 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
6 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device -
7 CCD
прилад із зарядовим зв’язком, ПЗЗ - bulk-channel CCD
- buried-channel CCD
- deep-depletion CCD
- junction CCD
- overlapping-gate CCD
- parallel-transfer CCD
- peristaltic CCD
- polysilicon-gate CCD
- recirculatlng CCD
- self-aligned CCD
- short-gate CCD
- staggered-охide CCD
- stepped-охide CCD
- surface-channel CCD
- two-phase CCD -
8 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
9 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
10 width
1) ширина 2) тривалість (імпульсу) - fine-line width
- forbidden-band width
- highway width
- pattern line width
- pulse width
- submicron channel width
- tape width
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